A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica–titania (m-ST) nanocomposites is introduced in this study. The nanostructured m-ST layer in an Al/m-ST/Pt device was constructed by facile soft templating of evaporation-induced self-assembly (EISA) method to demonstrate nonlinear threshold RS behaviors accompanying with discrete synaptic characteristics along with adaptive motions. The EISA layer was composed of well-ordered mesopores (∼10 nm), where paths of electrical currents could be controllably guided and sequentially activated by repeated voltage sweeps. The combinational memristive behavior accompanying the shift of threshold voltage (V_th) could implicate concurrent performances of threshold RS and selection diode devices. In addition, synaptic functionalities of long-term potentiation and depression were …​